Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

被引：13
|
作者：
Takats, V. [1 ]
Trunov, M. L. [2 ,3 ]
Vad, K. [1 ]
Hakl, J. [1 ]
Beke, D. L. [4 ]
Kaganovskii, Yu. [5 ]
Koekenyesi, S. [6 ]
机构：
[1] HAS, Inst Nucl Res, H-4026 Debrecen, Hungary
[2] Uzhgorod Natl Univ, UA-88000 Uzhgorod, Ukraine
[3] IIR NAS Ukraine, Uzhgorod Sci Technol Ctr, UA-88000 Uzhgorod, Ukraine
[4] Univ Debrecen, Dept Solid State Phys, H-4010 Debrecen, Hungary
[5] Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel
[6] Univ Debrecen, Inst Phys, H-4010 Debrecen, Hungary
来源：
MATERIALS LETTERS | 2015年 / 160卷
关键词：
Amorphous chalcogenide films; Diffusion; Photo-induced mass transport; Surface relief gratings; CHALCOGENIDE GLASSES; AS-SE; TRANSPORT;
D O I：
10.1016/j.matlet.2015.08.040
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have detected that surface relief gratings (SRG) in amorphous chalcogenide films As20Se80 can be optically recorded at low temperature, such as 77 K. A diffusion mechanism of photo-induced (PI) mass transport is proposed. A driving force of PI mass transport is a lateral steady state electric field induced by light interference. The kinetics of PI SRG growth depends on temperature due to temperature dependence of PI. diffusion coefficients and concentration of radiation defects. By comparison of low temperature kinetics with that at 300 K we estimated diffusion activation energy, which turned out 0.09 eV. We present a model that explains low diffusion activation energy. (C) 2015 Elsevier B.V. All rights reserved.
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页码：558 / 561
页数：4
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