Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy

被引：27

作者：

Chao, C. K. ^{[1
]}

Chyi, J. I.

Hsiao, C. N.

Kei, C. C.

Kuo, S. Y.

Chang, H. -S.

Hsu, T. M.

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan

[2] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 23期

关键词：

D O I：

10.1063/1.2210296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the growth of indium nitride (InN) nanorods on sapphire by chemical-beam epitaxy without a catalyst. The nanorods are synthesized nearly unidirectionally along the 001) direction and the diameters varied in the range of 20-40 nm with In/N flow ratio. Single-crystalline wurtzite structure is verified by x-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN nanorods have sharp peaks E-2 (high) at 491 cm(-1) and A(1) (LO) at 593 cm(-1). (c) 2006 American Institute of Physics.

引用

页数：3

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