Calculation of Secondary Electron Emission Coefficient from MgO and CaO

被引：0

作者：

Li, Q. F. ^{[1
]}

Tu, Y. ^{[1
]}

Tolner, H. ^{[1
]}

Yang, L. L. ^{[1
]}

机构：

[1] Southeast Univ, Sch Elect Sci & Engn, Display R&D Ctr, Nanjing, Jiangsu, Peoples R China

来源：

PROCEEDINGS OF CHINA DISPLAY/ASIA DISPLAY 2011 | 2011年

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

Secondary electron emission; F center; MgO; CaO; MAGNESIUM-OXIDE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Secondary electron emission coefficient values (gamma) for Neon and Xenon ion of MgO and CaO were calculated, assuming that Auger transitions from the valence band, and the F and F+ centers in the MgO surface are possible. The calculated gamma values for MgO and CaO with F and F+ centers included, show that the maximum possible gamma value for Xe+ ions is about 10 times larger in CaO than in MgO, with values of to 0.288 and 0.033 respectively. Without defects states (F, F+ center), the calculated gamma values of Xe+ for MgO and CaO are zero. The results will be helpful for the optimization of the PDP protective layer.

引用

页码：264 / 266

页数：3

共 14 条

[1] Investigation of possible replacement of protective magnesium oxide layer in plasma display panels by barium ternary oxides
Denks, V.
Aints, M.
Avarmaa, T.
Choi, J-S
Feldbach, E.
Jaaniso, R.
Kasikov, A.
Kirm, M.
Kodu, M.
Lee, M-S
Maaroos, A.
Matulevich, Y. T.
Mandar, H.
Raud, J.
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (15) : 4503 - 4507
[2] Doveren H. V., 1980, J ELECT SPECTROSC RE, V21, P265
[3] Semi-empirical simulations of the electron centers in MgO crystal
Eglitis, R. I.
Kuklja, M. M.
Kotomin, E. A.
Stashans, A.
Popov, A. I.
[J]. COMPUTATIONAL MATERIALS SCIENCE, 1996, 5 (04) : 298 - 306
[4] FUNDAMENTAL OPTICAL ABSORPTION, ELECTRICAL CONDUCTIVITY, AND THERMOELECTRIC POWER OF CALCIUM OXIDE
GLASCOCK, HH
HENSLEY, EB
[J]. PHYSICAL REVIEW, 1963, 131 (02): : 649 - &
[5] Henderson B., 1969, PHYS REV, V183
[6] Dry etching of MgCaO gate dielectric and passivation layers on GaN
Hlad, M.
Voss, L.
Gila, B. P.
Abernathy, C. R.
Pearton, S. J.
Ren, F.
[J]. APPLIED SURFACE SCIENCE, 2006, 252 (22) : 8010 - 8014
[7] The effect of impurities on the electronic properties of MgO
Jalili, Seifollah
Majidi, Roya
[J]. PHYSICA B-CONDENSED MATTER, 2008, 403 (19-20) : 3522 - 3526
[8] Electronic structure of F, F+-center in MgO
Jun, C
Lin, L
Lu, T
Yong, L
[J]. EUROPEAN PHYSICAL JOURNAL B, 1999, 9 (04) : 593 - 598
[9] F+ AND F' CENTERS IN MAGNESIUM OXIDE
KAPPERS, LA
KROES, RL
HENSLEY, EB
[J]. PHYSICAL REVIEW B, 1970, 1 (10): : 4151 - &
[10] [李巧芬 Li Qiaofen], 2009, [真空科学与技术学报, Journal of Vacuum Science and Technology], V29, P597

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