Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination

被引：29

作者：

Guenther, Kay-Michael ^{[1
]}

Gimpel, Thomas ^{[2
]}

Tomm, Jens W. ^{[3
]}

Winter, Stefan ^{[4
]}

Ruibys, Augustinas ^{[2
]}

Kontermann, Stefan ^{[2
]}

Schade, Wolfgang ^{[1
,2
]}

机构：

[1] Tech Univ Clausthal, EFZN, D-38640 Goslar, Germany

[2] Fraunhofer Heinrich Hertz Inst, D-38640 Goslar, Germany

[3] Max Born Inst, D-12489 Berlin, Germany

[4] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 04期

关键词：

SOLAR-CELLS; EFFICIENCY;

D O I：

10.1063/1.4863439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With Fourier-transform photocurrent spectroscopy and spectral response measurements, we show that silicon doped with sulfur by femtosecond laser irradiation generates excess carriers, when illuminated with infrared light above 1100 nm. Three distinct sub-bandgap photocurrent features are observed. Their onset energies are in good agreement with the known sulfur levels S+, S-0, and S-2(0). The excess carriers are separated by a pn-junction to form a significant photocurrent. Therefore, this material likely demonstrates the impurity band photovoltaic effect. (C) 2014 AIP Publishing LLC.

引用

页数：4

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