Bridgman crystal growth and defect formation in GaSb

被引：27

作者：

Boiton, P ^{[1
]}

Giacometti, N ^{[1
]}

Duffar, T ^{[1
]}

Santailler, JL ^{[1
]}

Dusserre, P ^{[1
]}

Nabot, JP ^{[1
]}

机构：

[1] Commissariat Energ Atom, CEREM, DEM, F-38054 Grenoble 9, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 206卷 / 03期

关键词：

vertical Bridgman process; GaSb; dislocations; grains; twins; stress;

D O I：

10.1016/S0022-0248(99)00333-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

2 " GaSb single crystals have been grown by the vertical Bridgman method. It is shown that encapsulation by a molten salt is necessary to avoid spurious nucleation and sticking of the crystal on the crucible, both the phenomena being deleterious to the crystal quality. Twinning, observed even during growth under encapsulant, has been decreased by an increase of the thermal gradient applied along the crucible. Single crystals present structural and electronic properties close to the classical values reported for undoped GaSb grown by the Czochralski or LEC techniques. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：159 / 165

页数：7

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