A comparison of the degradation and annealing kinetics in amorphous silicon and amorphous silicon-germanium solar cells

被引:6
|
作者
Carlson, DE [1 ]
Chen, LF [1 ]
Ganguly, G [1 ]
Lin, G [1 ]
Middya, AR [1 ]
Crandall, RS [1 ]
Reedy, R [1 ]
机构
[1] Solarex, Toano, VA 23168 USA
关键词
D O I
10.1557/PROC-557-395
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The degradation and annealing kinetics of both a-Si:H and a-SiGe:H single-junction solar cells were investigated under varying conditions. In every case, the kinetics associated with degradation and annealing were slower for a-SiGe:H cells than for a-Si:H cells. Since deuterium diffusion studies indicate that the hydrogen in our a-SiGe:H films diffuses more slowly than that in the a-Si:H films, hydrogen motion may play a role in determining both the degradation and annealing kinetics of the devices.
引用
收藏
页码:395 / 400
页数:6
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