Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets

被引：7

作者：

Chuang, Chiashain ^{[1
]}

Mineharu, Masaaki ^{[2
]}

Matsunaga, Masahiro ^{[2
,3
]}

Liu, Chieh-Wen ^{[4
,5
]}

Wu, Bi-Yi ^{[5
]}

Kim, Gil-Ho ^{[6
,7
]}

Watanabe, Kenji ^{[8
]}

Taniguchi, Takashi ^{[8
]}

Liang, Chi-Te ^{[5
]}

Aoki, Nobuyuki ^{[2
]}

机构：

[1] Chung Yuan Christian Univ, Dept Elect Engn, Taoyuan 320, Taiwan

[2] Chiba Univ, Dept Mat Sci, Chiba 2638522, Japan

[3] Nagoya Univ, Venture Business Lab, Nagoya, Aichi 4648601, Japan

[4] Case Western Reserve Univ, Dept Phys, 2076 Adelber Rd, Cleveland, OH 44106 USA

[5] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 106, Taiwan

[6] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 16419, South Korea

[7] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea

[8] Natl Inst Mat Sci, Adv Mat Lab, 1-1 Namki, Tsukuba, Ibaraki 3050044, Japan

来源：

CARBON | 2019年 / 154卷

关键词：

Graphene; Chemical vapor deposition; Boron nitride; Coherent; Interference; BORON-NITRIDE; BALLISTIC TRANSPORT; GRAIN-BOUNDARIES; HIGH-QUALITY; LARGE-AREA; FILMS; STRAIN;

D O I：

10.1016/j.carbon.2019.07.057

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report fabrication and measurements of hexagonal boron nitride (h-BN)/chemical vapor deposition (CVD) graphene/h-BN heterostructure devices without using expensive, time-consuming electron-beam lithography and toxic carbon tetrafluoride or sulfur tetrafluoride etching. We use efficient transfer of h-BN/CVD graphene by polypropylene carbonate onto a pre-prepared metal contacts/h-BN/SiO2 substrate. In this case, CVD-graphene is suspended from the h-BN substrate which allows efficient gas annealing process for improving the device mobility. Interestingly, we find that the top h-BN capping layer could enhance the carrier interference effect in CVD graphene, a great advantage for low-cost graphene-based interference-type electronic devices. (C) 2019 Elsevier Ltd. All rights reserved.

引用

页码：238 / 243

页数：6

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