Doping-Induced Stacking Transition in Trilayer Graphene: Implications for Layer Stacking Manipulation

被引：11

作者：

Delikoukos, Nikos ^{[1
,2
]}

Tasis, Dimitrios ^{[3
,4
]}

Michail, Antonios ^{[1
,2
]}

Parthenios, John ^{[2
]}

Koukaras, Emmanuel N. ^{[5
]}

Papagelis, Konstantinos ^{[2
,6
]}

机构：

[1] Univ Patras, Dept Phys, Patras 26504, Greece

[2] Fdn Res & Technol Hellas FORTH ICE HT, Inst Chem Engn Sci, Patras 26504, Greece

[3] Univ Ioannina, Dept Chem, Ioannina 45110, Greece

[4] Univ Ioannina, Univ Res Ctr Ioannina URCI, Inst Mat Sci & Comp, Ioannina 45110, Greece

[5] Aristotle Univ Thessaloniki, Dept Chem, Lab Quantum & Computat Chem, GR-54124 Thessaloniki, Greece

[6] Aristotle Univ Thessaloniki, Sch Phys, Dept Solid State Phys, Thessaloniki 54124, Greece

来源：

ACS APPLIED NANO MATERIALS | 2020年 / 3卷 / 12期

关键词：

multilayer graphene; trilayer graphene; stacking transformation; Raman spectroscopy; physical adsorption; RAMAN-SPECTROSCOPY; BAND-GAP; GRAPHITE; PSEUDOPOTENTIALS; SCATTERING; TRANSPORT; DISORDER; EXCHANGE; SOLITONS; BILAYER;

D O I：

10.1021/acsanm.0c02400

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate a crystallographic configurational transformation from rhombohedral (ABC) to Bernal (ABA) stacking by exposing large area exfoliated trilayer graphene (3LG) to nitric acid vapors and effectively introduce an approach to induce motion between adjacent stackings. We employ Raman spectroscopy, which is sensitive to interlayer stacking distortion of 3LG, to qualitatively study the crystallographic transformation. We have found that after 2 h of nitric acid exposure (doping), the ABC domains transformed completely to ABA ones, while area and linear maps across selected regions of the sample reveal a micrometer-scale shift of the upper layer of 3LG relative to the lower ones. The latter provides evidence that the unfolding of wrinkles plays an important role in stacking transformation.

引用

页码：11861 / 11868

页数：8

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