Phase formation and structure of magnetron sputtered chromium nitride films: in-situ and ex-situ studies

被引:45
作者
Zhao, ZB
Rek, ZU
Yalisove, SM
Bilello, JC
机构
[1] Delphi Res Labs, Shelby Twp, MI 48315 USA
[2] Stanford Univ, Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA
[3] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
关键词
thin films; reactive sputtering; chromium nitride; X-ray diffraction;
D O I
10.1016/j.surfcoat.2003.12.026
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effects of deposition conditions on phase formation, crystallographic characteristics, residual stress, and morphology of chromium nitride films have been studied. The films were prepared via reactive magnetron sputtering with a confocal deposition geometry. The geometry is compatible with an X-ray diffraction system, which allows the growing films to be studied in-situ and in a quasi-real time fashion. The use of the unique film growth/characterization system indicates that in-situ X-ray diffraction can be a useful tool for in-situ monitoring film depositions at various growth stages. In addition to in-situ diffraction studies, the grazing incidence X-ray scattering (GIXS) with synchrotron radiation, pole figures, double crystal diffraction topography (DCDT) and scanning electron microscope were also used to characterize the post-deposited films. The effect of nitrogen flow on phase formation can be described based on three ranges of nitrogen flows. With low nitrogen flows, the films consist of primarily BCC Cr phase or hexagonal beta-Cr2N. Growth at moderate nitrogen flows leads to the films of N-deficient cubic CrN1-x With high nitrogen flow, the deposition results in films of nearly stoichiometric CrN with the (I 11) type texture. In particular, the processing window for Cr2N appears to be very small, in comparison with CrN, which can be readily obtained at high nitrogen flows. Thus the films of single Cr2N phase with well-defined structure can only be obtained under strictly controlled conditions. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:329 / 339
页数:11
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