Advanced research into the growth mechanism and optical properties of wurtzite ZnSe quantum dots

被引:6
|
作者
Han, Donglai [1 ,2 ]
Feng, Bo [3 ]
Cao, Jian [3 ]
Gao, Ming [3 ]
Yang, Shuo [1 ,2 ]
Yang, Jinghai [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Jilin Normal Univ, Key Lab Funct Mat Phys & Chem, Minist Educ, Siping 136000, Peoples R China
基金
中国国家自然科学基金;
关键词
NANOWIRE LASERS; COLLOIDAL ZNSE; NANOCRYSTALS; PHOTOLUMINESCENCE; ZNO; TEMPERATURE; CORE/SHELL; DYNAMICS; NANOSTRUCTURES; NANOPARTICLES;
D O I
10.1007/s10854-014-2068-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Zinc selenide (ZnSe) quantum dots (QDs) with the hexagonal wurtzite structure were successfully prepared using a safe, controllable ethylenediamine-mediated solvothermal method in the absence of surfactants. This new synthesis process of the wurtzite ZnSe QDs was described and the growth mechanism of QDs was proposed. The room-temperature photoluminescence (PL) spectrum of the wurtzite ZnSe QDs (about 4 nm) showed a strong near-band-edge emission peak at 422 nm. The near-band-edge emission peak was blue-shifted compared to that of the bulk ZnSe due to the quantum confinement effects; the peak also displayed a progressive red-shift with increasing the excitation power and an associated reduction in peak energy of up to 300 meV. Band gap renormalization in the electron-hole plasma regime might be used to explain this phenomenon. No previous published research regarding the observed excitation-power-dependent PL properties of the wurtzite ZnSe QDs had been found. Our experimental results contributed valuable insights into the optical properties of the wurtzite ZnSe QDs; with potential applications in optoelectronics and other areas where advanced uniformly-structured nanocrystalline semiconductor materials were finding increased use.
引用
收藏
页码:3639 / 3644
页数:6
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