High Power 1060 nm Distributed Feedback Semiconductor Laser

被引：13

作者：

Zhai Teng ^{[1
]}

Tan Shao-Yang ^{[1
]}

Lu Dan ^{[1
]}

Wang Wei ^{[1
]}

Zhang Rui-Kang ^{[1
]}

Ji Chen ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2014年 / 31卷 / 02期

基金：

中国国家自然科学基金;

关键词：

DBR LASERS; DIODES; GENERATION; DFB;

D O I：

10.1088/0256-307X/31/2/024203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A GaAs based high power distributed feedback (DFB) semiconductor laser with a second-order grating has been demonstrated. An output power of 150 mW at an injection current of 350 mA is realized with a 1-mm cavity length. With a new design of the waveguide structure, the DFB laser maintains a stable single longitudinal mode around 1060 nm with a side mode suppression ratio of larger than 50 dB.

引用

页数：3

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