Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

被引：88
作者：
Bisi, Davide [1 ]
Meneghini, Matteo [1 ]
Marino, Fabio Alessio [1 ]
Marcon, Denis [2 ]
Stoffels, Steve [2 ]
Van Hove, Marleen [2 ]
Decoutere, Stefaan [2 ]
Meneghesso, Gaudenzio [1 ]
Zanoni, Enrico [1 ]
机构：
[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
[2] IMEC, B-3001 Heverlee, Belgium
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 10期
关键词：
GaN; HEMT; trapping; dynamic R-ON; current collapse; temperature; TRAPS; EMISSION; CAPTURE;
D O I：
10.1109/LED.2014.2344439
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter reports an extensive analysis of the charge capture transients induced by OFF-state bias in double heterostructure AlGaN/GaN MIS-high electron mobility transistor grown on silicon substrate. The exposure to OFF-state bias induces a significant increase in the ON-resistance (R-on) of the devices. Thanks to time-resolved on-the-fly analysis of the trapping kinetics, we demonstrate the following relevant results: 1) R-on-increase is temperature-and field-dependent, hence can significantly limit the dynamic performance of the devices at relatively high-voltage and high temperature (100 degrees C-140 degrees C) operative conditions; 2) the comparison between OFF-state and back-gating stress indicates that the major contribution to the R-on-increase is due to the trapping of electrons in the buffer, and not at the surface; 3) the observed exponential kinetics suggests the involvement of point-defects, featuring thermally activated capture cross section; and 4) trapping-rate is correlated with buffer vertical leakage-current and is almost independent to gate-drain length.
引用
收藏
页码：1004 / 1006
页数：3
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