Semiconductor crystal growth under microgravity: Results of float-zone technique

被引：1

作者：

Benz, KW ^{[1
]}

Croell, A ^{[1
]}

机构：

[1] Univ Freiburg, Inst Kristallog, D-79104 Freiburg, Germany

来源：

GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES | 1999年 / 24卷 / 10期

关键词：

D O I：

10.1016/S0273-1177(99)00718-8

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

Semiconductor crystal growth experiments performed in Germany often used the Floating-zone technique (FZ). Recent Results of the FZ growth of Silicon, Si and Galliumantimonide, GaSb in connection with fluid dynamics will be reported. (C) 1999 COSPAR. Published by Elsevier Science Ltd.

引用

页码：1189 / 1194

页数：6

共 50 条

[21] Industrial growth of large diameter float-zone silicon ingots
Hensel, W
PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON, 1996, 96 (13): : 3 - 14
[22] Crystal growth of a binary semiconductor under microgravity conditions
Hiraoka, Y
Ikegami, K
Maekawa, T
Matsumoto, S
Yoda, S
Kinoshita, K
FIRST INTERNATIONAL SYMPOSIUM ON MICROGRAVITY RESEARCH & APPLICATIONS IN PHYSICAL SCIENCES AND BIOTECHNOLOGY, VOLS I AND II, PROCEEDINGS, 2001, 454 : 367 - 372
[23] NUMERICAL SIMULATIONS OF INDUCTIVE-HEATED FLOAT-ZONE GROWTH
CHAN, YT
CHOI, SK
JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) : 3741 - 3749
[24] Liquid encapsulated float zone growth of InBi in microgravity
Abbaschian, R
Lopez, C
Gokhale, A
Jensen, E
Raman, R
SOLIDIFICATION SCIENCE AND PROCESSING, 1996, : 319 - 329
[25] THERMOCAPILLARY FLOWS IN A ROTATING FLOAT ZONE UNDER MICROGRAVITY
NATARAJAN, R
AICHE JOURNAL, 1989, 35 (04) : 614 - 624
[26] AI2O3 SINGLE CRYSTAL GROWTH BY ELECTRON BEAM FLOAT-ZONE MELTING
CLASS, W
NESOR, HR
VACUUM, 1966, 16 (06) : 315 - &
[27] LINEAR-STABILITY THEORY OF THERMOCAPILLARY CONVECTION IN A MODEL OF THE FLOAT-ZONE CRYSTAL-GROWTH PROCESS
NEITZEL, GP
CHANG, KT
JANKOWSKI, DF
MITTELMANN, HD
PHYSICS OF FLUIDS A-FLUID DYNAMICS, 1993, 5 (01): : 108 - 114
[28] Effect of energy conservation on a heat transfer study of float-zone growth
Chen, Jyh-Chen
Ueng, Wu-Fu
Journal of the Chinese Society of Mechanical Engineers, Transactions of the Chinese Institute of Engineers, Series C/Chung-Kuo Chi Hsueh Kung Ch'eng Hsuebo Pao, 1993, 14 (05): : 522 - 527
[29] DOMAIN-WALL MOBILITY IN ORTHOFERRITE CRYSTALS GROWN BY FLOAT-ZONE TECHNIQUE
MARSH, A
FAIRHOLM.RJ
GILL, GP
IEEE TRANSACTIONS ON MAGNETICS, 1971, MAG7 (03) : 470 - &
[30] Properties of iron-doped multicrystalline silicon grown by the float-zone technique
Ciszek, TF
Wang, TH
Ahrenkiel, RK
Matson, R
CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 737 - 739

← 1 2 3 4 5 →