Semiconductor crystal growth under microgravity: Results of float-zone technique

被引：1
|
作者：
Benz, KW [1 ]
Croell, A [1 ]
机构：
[1] Univ Freiburg, Inst Kristallog, D-79104 Freiburg, Germany
来源：
GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES | 1999年 / 24卷 / 10期
关键词：
D O I：
10.1016/S0273-1177(99)00718-8
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
Semiconductor crystal growth experiments performed in Germany often used the Floating-zone technique (FZ). Recent Results of the FZ growth of Silicon, Si and Galliumantimonide, GaSb in connection with fluid dynamics will be reported. (C) 1999 COSPAR. Published by Elsevier Science Ltd.
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收藏
页码：1189 / 1194
页数：6
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