Microstructural investigation on the grain refinement occurring in Cu-doped Ni-Ti thin films

被引：13
作者：
Callisti, M. [1 ]
Mellor, B. G. [2 ]
Polcar, T. [1 ,3 ]
机构：
[1] Univ Southampton, Fac Engn & Environm, Natl Ctr Adv Tribol Southampton, Southampton SO17 1BJ, Hants, England
[2] Univ Southampton, Fac Engn & Environm, Mat Res Grp, Southampton SO17 1BJ, Hants, England
[3] Czech Tech Univ, Fac Elect Engn, Dept Control Engn, CR-16635 Prague 6, Czech Republic
来源：
SCRIPTA MATERIALIA | 2014年 / 77卷
基金：
英国工程与自然科学研究理事会;
关键词：
Shape memory alloys (SMA); Physical vapour deposition (PVD); Grain boundary segregation; Transmission electron microscopy (TEM); SHAPE-MEMORY BEHAVIOR; CRYSTALLIZATION; TEMPERATURE; ALLOYS;
D O I：
10.1016/j.scriptamat.2014.01.021
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The mechanism of grain refinement in Cu-doped Ni-Ti thin films has been investigated by transmission electron microscopy. Sputter-deposited (Ni,Cu)-rich Ni-Ti Cu thin films exhibited a columnar structure consisting of grains whose lateral size decreased with increasing Cu content. Cu-rich grain boundary segregation was found to become prominent in films containing higher Cu contents. This segregation was attributed to a non-polymorphic crystallization process which lowered the grain growth rate as the Cu content in the films increased. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：52 / 55
页数：4
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