MOVPE-preparation of Si(111) surfaces for III-V nanowire growth

被引：0

作者：

Steidl, Matthias ^{[1
,2
]}

Paszuk, Agnieszka ^{[1
,2
]}

Zhao, Weihong ^{[1
,2
]}

Brueckner, Sebastian ^{[1
,2
]}

Dobrich, Anja ^{[2
]}

Supplie, Oliver ^{[2
,3
]}

Luczak, Johannes ^{[2
]}

Kleinschmidt, Peter ^{[1
,2
,4
]}

Doescher, Henning ^{[1
,2
]}

Hannappel, Thomas ^{[1
,2
,4
]}

机构：

[1] Tech Univ Ilmenau, Inst Phys, Postfach 100565, D-98684 Ilmenau, Germany

[2] Helmholtz Zentrum Berlin, Inst Solar Fuels, D-14109 Berlin, Germany

[3] Humboldt Universiat Berlin, Inst Phys, D-12489 Berlin, Germany

[4] Cis Forschungsinstitut Mikrosensorik & Photovolta, D-99099 Erfurt, Germany

来源：

2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年

关键词：

MOVPE; silicon; arsenic; morphology; XPS; FTIR; LEED; STM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the preparation of the clean Si(111) surface in H-2 ambient with in situ reflection anisotropy spectroscopy and UHV-based surface science tools after contamination-free transfer. X-ray photoelectron spectroscopy confirmed complete oxide removal after high-temperature annealing. In situ RAS enabled observation of the oxide removal in dependence of process temperature. Monohydride termination was verified by Fourier transform infrared spectroscopy which agrees with a (1x1) surface reconstruction we observed by scanning tunneling microscopy and low energy electron diffraction. By atomic force microscopy analysis of the morphology, we found that wet-chemical pretreatment has an impact on the different silicon surfaces we have prepared, including homoepitaxy and termination of silicon with arsenic.

引用

页数：2

共 6 条

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