How to achieve highest charge collection efficiency in heavily irradiated position-sensitive silicon detector

被引：13

作者：

Kramberger, G

Contarato, D

机构：

[1] Jozef Stefan Inst, SI-1111 Ljubljana, Slovenia

[2] Univ Hamburg, Inst Expt Phys, D-22761 Hamburg, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2006年 / 560卷 / 01期

关键词：

silicon detectors; charge collection efficiency; LHC upgrade;

D O I：

10.1016/j.nima.2005.11.246

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Simulation was used to study the dependence of geometry on induced charge in heavily irradiated position-sensitive silicon detectors. Impact of pixel/strip pitch, implant width, thickness and electric field profile on collected charge was discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：98 / 102

页数：5

共 21 条

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