Lateral β-Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

被引：65

作者：

Hu, Zhuangzhuang ^{[1
]}

Zhou, Hong ^{[1
]}

Dang, Kui ^{[1
]}

Cai, Yuncong ^{[1
]}

Feng, Zhaoqing ^{[1
]}

Gao, Yangyang ^{[1
]}

Feng, Qian ^{[1
]}

Zhang, Jincheng ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2018年 / 6卷 / 01期

关键词：

beta-Ga2O3; nano-membrane; Sapphire substrate; lateral Schottky barrier diode; breakdown; MOVPE;

D O I：

10.1109/JEDS.2018.2853615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on achieving the first high performance lateral beta-Ga2O3 Schottky barrier diode (SBD) on sapphire substrate via transferring beta-Ga2O3 nano-membrane channel from a low dislocation density bulk beta-Ga2O3 substrate. Non field-plated lateral SBDs with Schottky-Ohmic contact distance of 4, 6, 11, and 15 mu m demonstrate a reverse breakdown voltage (BV) of 0.64, 0.85, 1.2, and 1.7 kV with on resistance (R-on) of 47, 66, 91, and 190 Omega center dot mm, respectively. This lateral R-on,(Sp) similar to BV performance is comparable to that of vertical SBDs. Combining with 10(7) similar to 10(8) high temperature current on/off ratio, beta-Ga2O3 SBD shows its great promise for power rectifying once the beta-Ga2O3 drift layer epitaxial growth becomes more mature.

引用

页码：815 / 820

页数：6

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