BiCuSeO oxyselenides: new promising thermoelectric materials

被引:607
作者
Zhao, Li-Dong [1 ]
He, Jiaqing [2 ]
Berardan, David [1 ]
Lin, Yuanhua [3 ]
Li, Jing-Feng [3 ]
Nan, Ce-Wen [3 ]
Dragoe, Nita [1 ]
机构
[1] Univ Paris 11, CNRS, UMR 8182, ICMMO,SP2M, F-91405 Orsay, France
[2] South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
[3] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
关键词
LOW THERMAL-CONDUCTIVITY; PERFORMANCE BULK THERMOELECTRICS; P-TYPE SEMICONDUCTOR; TRANSPORT-PROPERTIES; LAYERED SUPERCONDUCTOR; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURES; OPTICAL-PROPERTIES; ROOM-TEMPERATURE; X-RAY;
D O I
10.1039/c4ee00997e
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
BiCuSeO oxyselenides have recently acquired ever-increasing attention and have been extensively studied as very promising thermoelectric materials. The ZT of the BiCuSeO system was significantly increased from 0.5 to 1.4 in the past three years, which indicates that BiCuSeO oxyselenides are robust candidates for energy conversion applications. In this review, we first discuss and summarize the crystal structures, microstructures, electronic structures and physical/chemical properties of BiCuSeO oxyselenides. Then, the approaches that successfully enhanced the thermoelectric performances in the BiCuSeO system are outlined, which include increasing carrier concentration, optimizing Cu vacancies, a simple and facile ball milling method, multifunctional Pb doping, band gap tuning, and increasing carrier mobility through texturing. Theoretical calculations to predict a maximum ZT in the BiCuSeO system are also described. Finally, a discussion of future possible strategies is proposed to aim at further enhancing the thermoelectric figure of merit of these materials.
引用
收藏
页码:2900 / 2924
页数:25
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