On the capability of deep level transient spectroscopy for characterizing multi-crystalline silicon

被引：3
作者：
Mchedlidze, T. [1 ]
Nacke, M. [1 ]
Hieckmann, E. [1 ]
Weber, J. [1 ]
机构：
[1] Tech Univ Dresden, D-01062 Dresden, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 01期
关键词：
MULTICRYSTALLINE SILICON; DISLOCATION NETWORKS; GRAIN-BOUNDARIES; WAFERS; SEMICONDUCTORS; DEFECTS; PRECIPITATION; SPECTRA; STATES; IRON;
D O I：
10.1063/1.4837997
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The suitability of the deep level transient spectroscopy (DLTS) technique in exploring locations with high and degraded carrier lifetimes containing grain-boundaries (GBs) in multicrystalline silicon (mc-Si) wafers was studied. The types and locations of GBs were determined in mc-Si samples by electron backscatter diffraction. Mesa-type Schottky diodes were prepared at (along) GBs and at reference, GB-free locations. Detected DLTS signals varied strongly along the same GB. Experiments with dislocation networks, model structures for GBs, showed that GB-related traps may be explored only using special arrangement of a GB and the diode contacts. Iron-related carrier traps were detected in locations with degraded carrier lifetimes. Densities of the traps for near-GB and for GB free locations were compared to the lifetime measurement results. (C) 2014 AIP Publishing LLC.
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页数：5
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