Hydrogenic donor in asymmetric AlxLGa1-xLAs/GaAs/AlxRGa1-xRAs quantum wells

被引：13

作者：

Akbas, H. ^{[1
]}

Dane, C. ^{[2
]}

Erdogan, I. ^{[1
]}

Akankan, O. ^{[1
]}

机构：

[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey

[2] Trakya Univ, Dept Math, TR-22030 Edirne, Turkey

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2014年 / 60卷

关键词：

Quantum well; Binding energy; Density of impurity states; Impurity position; SHALLOW IMPURITY STATES; APPLIED ELECTRIC-FIELD; HYDROSTATIC-PRESSURE; BINDING-ENERGY; CROSS-SECTION; DENSITY; TEMPERATURE; SPECTRA;

D O I：

10.1016/j.physe.2014.03.003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work we study the effects of barrier height ratio V-L/V-R on asymmetric AlxLGa1-xLAs/GaAs/AlxRGa1-xRAs quantum wells in absence of external influences. We use a variational method within the effective mass approximation to observe the effects of the barrier height ratio. It has been observed that the binding energy of the impurity, the expectation value of the electron-impurity distance along the z-direction, density of impurity states, and edge binding energy difference depend strongly on the barrier height ratio. Furthermore we present new curves that analyze the binding energy of asymmetric quantum wells as functions of barrier height ratio. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：196 / 199

页数：4

共 17 条

[1] Hydrostatic pressure effects on impurity states in GaAs/AlAs quantum wells [J].