Ion transport and dielectric relaxation studies in nanocrystalline Ce0.8Ho0.2O2-δ material

被引:26
作者
Baral, Ashok Kumar [1 ]
Sankaranarayanan, V. [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
关键词
Nanocrystalline Ho doped ceria; Structural inhomogeneity; Dielectric relaxation; Migration energy; DOPED CERIA; CONDUCTIVITY; ELECTROLYTES; CONDUCTORS; IMPEDANCE;
D O I
10.1016/j.physb.2009.02.002
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The ac electrical conductivity and dielectric relaxation properties of nanocrystalline 20 mol% Ho doped ceria (Ce0.8Ho0.2O2-delta) prepared by citrate auto ignition method, were studied in the temperature range 300-550 degrees C. The conductivity behaviour showed the absence of any precipitation of Ho inside the grains, even though it has the tendency of forming a C-type structure similar to Ho2O3 in association with oxygen vacancies. The frequency spectra of electric modulus M '' exhibits a single relaxation peak corresponding to relaxation reorientation of oxygen vacancy around the Ho+3 ions in the cubic nanostructured material. The migration of oxygen ions in the nanocrystalline Ce0.8Ho0.2O2-delta material takes place through hopping and the migration energy and association energy of oxygen vacancies in the long range order motion are found to be 1.02 and 0.24 eV, respectively. (C) 2009 Elsevier B.V. All rights reserved.
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页码:1674 / 1678
页数:5
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