Stress effect on the ferroelectric-to-paraelectric phase transition in heteroepitaxial (Ba,Sr)TiO3/(001)MgO thin film studied by Raman scattering and x-ray diffraction -: art. no. 052103

被引：44

作者：

Yuzyuk, YI ^{[1
]}

Simon, P

Zakharchenko, IN

Alyoshin, VA

Sviridov, EV

机构：

[1] CNRS, Ctr Rech Mat Haute Temp, UPR4212, F-45071 Orleans, France

[2] Rostov State Univ, Inst Phys, Rostov Na Donu 344090, Russia

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.66.052103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report experimental evidence for the stress-induced tetragonal symmetry of the paraelectric phase in heteroepitaxial (Ba0.7Sr0.3)TiO3 thin film deposited on the (001)MgO substrate. Our Raman and x-ray-diffraction data evidently show that symmetry of the paraelectric phase is tetragonal well above the Curie temperature due to the two-dimensional compressive stresses imposed on the film by the substrate. On approaching the deposition temperature the thermoelastic compressive stresses vanish and Raman measurements revealed cubic symmetry of the paraelectric phase.

引用

页码：521031 / 521034

页数：4

共 22 条

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