1 Tb/s high quality factor NAND gate using quantum-dot semiconductor optical amplifiers in Mach-Zehnder interferometer

被引：19

作者：

Kotb, A. ^{[1
,2
]}

Zoiros, K. E. ^{[3
]}

机构：

[1] Fayoum Univ, Dept Phys, Fac Sci, Al Fayyum 63514, Egypt

[2] Northern Borders Univ, Dept Phys, Coll Sci, Ar Ar 1321, Saudi Arabia

[3] Democritus Univ Thrace, Dept Elect & Comp Engn, Sch Engn, Lightwave Commun Res Grp, GR-67100 Xanthi, Greece

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2014年 / 13卷 / 02期

关键词：

NAND gate; Quantum-dot semiconductor optical amplifier; Mach-Zehnder interferometer; Amplified spontaneous emission; GAIN DYNAMICS; PERFORMANCE;

D O I：

10.1007/s10825-014-0567-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of all-optical logic NAND gate realized by employing quantum-dot semiconductor optical amplifiers (QD-SOAs)-based Mach-Zehnder interferometers (MZI) is numerically simulated. Boolean NAND operation is achieved by a series combination of properly configured and driven QD-SOAs-MZIs. The theoretical study is carried out by taking into account the effect of amplified spontaneous emission. The dependence of the output -factor on data signals and QD-SOA parameters is investigated and discussed. The obtained results indicate that the NAND gate is capable of operating at 1 Tb/s with high output quality factor (-factor) provided that these parameters are properly optimized.

引用

页码：555 / 561

页数：7

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