Etching of pentacene film using atomic hydrogen generated on heated tungsten

被引：12

作者：

Heya, Akira ^{[1
]}

Matsuo, Naoto ^{[1
]}

机构：

[1] Univ Hyogo, Dept Mat Sci & Chem, Himeji, Hyogo 6712280, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 05期

关键词：

POLY(ETHYLENE NAPHTHALATE) SUBSTRATE; CHEMICAL-VAPOR-DEPOSITION; SURFACE-MODIFICATION; H-ATOMS; REMOVAL; CATALYZER;

D O I：

10.7567/JJAP.53.058002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An etching method for organic semiconductor materials called atomic hydrogen treatment was investigated. In this method, the high-density atomic hydrogen is generated on a heated tungsten surface by a catalytic cracking reaction. Also pentacene films are etched at 0.07 nm/s in tungsten temperature of 1700 degrees C and sample holder of 60 degrees C. It is considered that the patterning of organic films using atomic hydrogen at low temperatures without plasma damage is useful for the realization of flexible semiconductor devices. (C) 2014 The Japan Society of Applied Physics

引用

页数：3

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