Threshold voltage adjustment of ferroelectric-gate field effect transistors by ion implantation

被引：30

作者：

Li, Qiu-Hong ^{[1
]}

Horiuchi, Takeshi ^{[1
]}

Wang, Shouyu ^{[1
]}

Takahashi, Mitsue ^{[1
]}

Sakai, Shigeki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 02期

关键词：

LONG RETENTION; INSULATOR; METAL;

D O I：

10.1088/0268-1242/24/2/025012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electric properties of ferroelectric-gate field-effect transistors (FeFETs) are investigated by using ion implantation. The doping concentration increases from 4 x 10(14) to 1 x 10(18) cm(-3), and the corresponding threshold voltages of the FeFETs shift from 0.18 to-1.65 V, and from 0.98 to-0.54 V for the left-and right-side threshold voltages, respectively, which can be fitted to a theoretical result. The retention is measured at different doping concentrations for about 2 days, and all exhibit good retention characteristic. The results show that ion implantation is an effective method to adjust the threshold voltage in FeFET technology.

引用

页数：4

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