Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory

被引：16
作者：
Govoreanu, B. [1 ]
Degraeve, R. [1 ]
Zahid, M. B. [1 ]
Nyns, L. [1 ]
Cho, M. [1 ]
Kaczer, B. [1 ]
Jurczak, M. [1 ]
Kittl, J. A. [1 ]
Van Houdt, J. [1 ]
机构：
[1] IMEC, B-3001 Leuven, Belgium
来源：
MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期
关键词：
HfAlO; High-k materials; Defect density; Interpoly dielectrics; Flash memory; NAND; RELIABILITY;
D O I：
10.1016/j.mee.2009.03.099
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Introduction of high-k dielectrics in Flash memory is seen as a must for the upcoming technology nodes. Hafnium aluminate (HfAlO) has been identified as a possible candidate for implementing the interpoly dielectric in floating gate memory. In this work, we establish a link between the material morphology and its electrical response, allowing to understand memory device behavior and to consequently assess the potential and limitations of HfAlO as IPD in a memory cell. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1807 / 1811
页数：5
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