Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory

被引：16

作者：

Govoreanu, B. ^{[1
]}

Degraeve, R. ^{[1
]}

Zahid, M. B. ^{[1
]}

Nyns, L. ^{[1
]}

Cho, M. ^{[1
]}

Kaczer, B. ^{[1
]}

Jurczak, M. ^{[1
]}

Kittl, J. A. ^{[1
]}

Van Houdt, J. ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

HfAlO; High-k materials; Defect density; Interpoly dielectrics; Flash memory; NAND; RELIABILITY;

D O I：

10.1016/j.mee.2009.03.099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Introduction of high-k dielectrics in Flash memory is seen as a must for the upcoming technology nodes. Hafnium aluminate (HfAlO) has been identified as a possible candidate for implementing the interpoly dielectric in floating gate memory. In this work, we establish a link between the material morphology and its electrical response, allowing to understand memory device behavior and to consequently assess the potential and limitations of HfAlO as IPD in a memory cell. (C) 2009 Elsevier B.V. All rights reserved.

引用

收藏

页码：1807 / 1811

页数：5

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