Terahertz pulse induced intervalley scattering in photoexcited GaAs

被引：96
作者：
Su, F. H. [1 ]
Blanchard, F. [2 ]
Sharma, G. [2 ]
Razzari, L. [2 ,3 ]
Ayesheshim, A. [1 ]
Cocker, T. L. [1 ]
Titova, L. V. [1 ]
Ozaki, T. [2 ]
Kieffer, J. -C. [2 ]
Morandotti, R. [2 ]
Reid, M. [4 ]
Hegmann, F. A. [1 ]
机构：
[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2G7, Canada
[2] Univ Quebec, Adv Laser Light Source, INRS EMT, Varennes, PQ J3X 1S2, Canada
[3] Univ Pavia, Dipartimento Elettron, I-27100 Pavia, Italy
[4] Univ No British Columbia, Dept Phys, Prince George, BC V2N 4Z9, Canada
来源：
OPTICS EXPRESS | 2009年 / 17卷 / 12期
基金：
加拿大自然科学与工程研究理事会;
关键词：
OPTICAL RECTIFICATION; ELECTRON-TRANSPORT; GALLIUM-ARSENIDE; NONLINEAR OPTICS; SPECTROSCOPY; GENERATION; PHOTOCONDUCTIVITY; SEMICONDUCTORS;
D O I：
10.1364/OE.17.009620
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Nonlinear transient absorption bleaching of intense few-cycle terahertz (THz) pulses is observed in photoexcited GaAs using optical-pump - THz-probe techniques. A simple model of the electron transport dynamics shows that the observed nonlinear response is due to THz-electric-field-induced intervalley scattering over sub-picosecond time scales as well as an increase in the intravalley scattering rate attributed to carrier heating. Furthermore, the nonlinear nature of the THz pulse transmission at high peak fields leads to a measured terahertz conductivity in the photoexcited GaAs that deviates significantly from the Drude behavior observed at low THz fields, emphasizing the need to explore nonlinear THz pulse interactions with materials in the time domain. (C) 2009 Optical Society of America
引用
收藏
页码：9620 / 9629
页数：10
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