Exploiting Process Variation for Write Performance Improvement on NAND Flash Memory Storage Systems

被引:32
作者
Shi, Liang [1 ,2 ]
Di, Yejia [1 ,2 ]
Zhao, Mengying [3 ]
Xue, Chun Jason [3 ]
Wu, Kaijie [1 ,2 ]
Sha, Edwin H. -M. [1 ,2 ]
机构
[1] Chongqing Univ, Key Lab Dependable Serv Comp Cyber Phys Soc, Minist Educ, Chongqing 400044, Peoples R China
[2] Chongqing Univ, Coll Comp Sci, Chongqing 400044, Peoples R China
[3] City Univ Hong Kong, Dept Comp Sci, Hong Kong, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
Hotness ranks; Process Variation (PV); speed groups; write performance;
D O I
10.1109/TVLSI.2015.2393299
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The write performance of flash memory has been degraded significantly due to the recent density-oriented advancements of flash technology. Techniques have been proposed to improve the write performance by exploiting the varying strength of a flash block in its different worn-out stages. A block is written with a faster speed when it is new and strong, and gradually will be written with slower speeds as it is aging and becomes weak. Motivated by these works, this brief proposes a new technique by exploiting the significant process variation among flash blocks introduced by the advanced technology scaling. First, a write speed detection approach is proposed to identify the strength of each block. Then, a heuristic approach is proposed to exploit the speed variation among blocks for write performance improvement. A series of trace-driven simulations shows that the proposed approach generates substantial write performance improvement over state-of-the-art approaches by 30% on average.
引用
收藏
页码:334 / 337
页数:4
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