Tuning Electrical Properties in Amorphous Zinc Tin Oxide Thin Films for Solution Processed Electronics

被引：59

作者：

Chandra, R. Devi ^{[1
]}

Rao, Manohar ^{[1
]}

Zhang, Keke ^{[1
]}

Prabhakar, Rajiv Ramanujam ^{[1
]}

Shi, Chen ^{[2
]}

Zhang, Jie ^{[4
]}

Mhaisalkar, Subodh G. ^{[1
,3
,4
]}

Mathews, Nripan ^{[1
,3
,5
]}

机构：

[1] Nanyang Technol Univ, Energy Res Inst, Singapore 637553, Singapore

[2] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 637553, Singapore

[4] Inst Mat Res & Engn, Singapore 117602, Singapore

[5] Singapore Berkeley Res Initiat Sustainable Energy, Singapore 138602, Singapore

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 02期

关键词：

zinc tin oxide; amorphous semiconductors; thin film transistors; CMOS inverter; Kelvin probe; solution processing; TEMPERATURE FABRICATION; TRANSISTORS; STANNATE;

D O I：

10.1021/am401003k

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Solution processed zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated by varying the Zn/Sn composition. The addition of Sn to the zinc oxide (ZnO) films resulted in improved electrical characteristics, with devices of Zn0.7Sn0.3O composition showing the highest mobility of 7.7 cm(2)/(V s). An improvement in subthreshold swings was also observed, indicative of a reduction of the interfacial trap densities. Mobility studies at low temperature have been carried out, which indicated that the activation energy was reduced with Sn incorporation. Kelvin probe force microscopy was performed on the films to evaluate work function and correlated to the metal semiconductor barrier indicating Zn0.7Sn0.3O films had the smallest barrier for charge injection. Organic inorganic hybrid complementary inverters with a maximum gain of 10 were fabricated by integrating ZTO TFTs with poly-3-hexylthiophene (P3HT) transistors.

引用

页码：773 / 777

页数：5

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