The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering

被引：16
作者：
Boulle, A. [1 ]
Aube, J. [1 ]
Galben-Sandulache, I. G. [2 ]
Chaussende, D. [2 ]
机构：
[1] ENSCI, CNRS, UMR Sci Procedes Ceram & Traitements Surface 6638, F-87065 Limoges, France
[2] Grenoble INP, CNRS, UMR 5628, Mat & Genie Phys Lab, F-38016 Grenoble 01, France
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 20期
关键词：
phase transformations; silicon compounds; slip; stacking faults; wide band gap semiconductors; X-ray scattering; SILICON-CARBIDE; CRYSTAL-GROWTH; THIN-FILMS; TRANSFORMATION;
D O I：
10.1063/1.3141509
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The 3C-6H polytypic transition in SiC single crystals is studied by means of diffuse x-ray scattering. Based on numerical simulations of the diffuse scattering intensity distribution we unambiguously prove that the 3C-6H transition in SiC occurs through the glide of partial dislocations and not by the "layer displacement" mechanism (i.e., local diffusional rearrangement of the Si and C atoms). The technique is extremely sensitive and can be used as a nondestructive mean to obtain statistically relevant values of the transition level down to similar to 0.05%.
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页数：3
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