Finite Element Simulation of Effects of Process Parameters on Deposition Rate of SiC by Chemical Vapor Deposition

被引：3
|
作者：
Sun, Guodong [1 ]
Li, Hejun [1 ]
Zhang, Shouyang [1 ]
Fu, Qiangang [1 ]
Cao, Wei [1 ]
Jiao, Yanqiong [1 ]
机构：
[1] Northwestern Polytech Univ, CC Composites Technol Res Ctr, Xian 710072, Peoples R China
来源：
MATERIALS RESEARCH, PTS 1 AND 2 | 2009年 / 610-613卷
关键词：
Finite Element Simulation; Chemical Vapor Deposition; Deposition Rate; Orthogonal Design; SiC Coating; COMPOSITES; CVD;
D O I：
10.4028/www.scientific.net/MSF.610-613.635
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A two-dimensional mathematical model for deposition behavior of SiC coating on C/C composites in a hot-wall CVD reactor was developed. Deposition rate of SiC was calculated by finite element method and optimized by using an orthogonal L-9(3)(4) test. The single and coupling effects of process parameters on deposition rate of SiC, including deposition temperature, the flux of mixed gases, the volume ratio of H-2 and Ar, and that of MTS and mixed gases, were Calculated and discussed. The optimal deposition rate of SiC was obtained.
引用
收藏
页码：635 / 640
页数：6
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