Oxidation behavior of silicon carbide at 1200°C in both air and water-vapor-rich environments

被引：91

作者：

Park, Dong Jun ^{[1
]}

Jung, Yang Il ^{[1
]}

Kim, Hyun Gil ^{[1
]}

Park, Jeong Yong ^{[1
]}

Koo, Yang Hyun ^{[1
]}

机构：

[1] Korea Atom Energy Res Inst, Taejon 305353, South Korea

来源：

CORROSION SCIENCE | 2014年 / 88卷

基金：

新加坡国家研究基金会;

关键词：

Ceramic; TEM; XPS; High-temperature corrosion; Oxidation; HIGH-TEMPERATURE OXIDATION; COMPOSITES; VOLATILITY; RESISTANCE; RECESSION; PRESSURE; REACTOR;

D O I：

10.1016/j.corsci.2014.07.052

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Oxidation of SiC in both air and water-vapor-rich environments was carried out at 1200 degrees C to examine the effects of different oxidation conditions on the early-stage oxidation behavior of SiC. Two different types of SiC oxidation behavior were found, passive or active, depending on the oxidation environment. All the samples possessed amorphous oxide layers, regardless of the oxidation environment. Three Si oxidation states (SiO, Si2O3, and SiO2) were observed in this layer. The amorphous Si2O3 state was dominant, and the ratio of the three different states changed with the test conditions. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：416 / 422

页数：7

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