Images of Edge Current in InAs/GaSb Quantum Wells

被引：133
|
作者：
Spanton, Eric M. [1 ,2 ]
Nowack, Katja C. [1 ,3 ]
Du, Lingjie [4 ]
Sullivan, Gerard [5 ]
Du, Rui-Rui [4 ]
Moler, Kathryn A. [1 ,2 ,3 ]
机构：
[1] SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA
[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[3] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[4] Rice Univ, Dept Phys & Astron, Houston, TX 77251 USA
[5] Teledyne Sci & Imaging, Thousand Oaks, CA 91630 USA
来源：
PHYSICAL REVIEW LETTERS | 2014年 / 113卷 / 02期
关键词：
STATE;
D O I：
10.1103/PhysRevLett.113.026804
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less than e(2)/h per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than h/e(2), it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature independent.
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页数：5
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