Halide Heterogeneity Affects Local Charge Carrier Dynamics in Mixed-Ion Lead Perovskite Thin Films

被引:33
|
作者
Wieghold, Sarah [1 ,3 ]
Tresback, Jason [2 ]
Correa-Baena, Juan-Pablo [1 ]
Hartono, Noor Titan Putri [1 ]
Sun, Shijing [1 ]
Liu, Zhe [1 ]
Layurova, Mariya [1 ]
VanOrman, Zachary A. [3 ]
Bieber, Alexander S. [3 ]
Thapa, Janak [1 ]
Lai, Barry [4 ]
Cai, Zhonghou [4 ]
Nienhaus, Lea [3 ]
Buonassisi, Tonio [1 ]
机构
[1] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[2] Harvard Univ, Ctr Nanoscale Syst, Cambridge, MA 02139 USA
[3] Florida State Univ, Dept Chem & Biochem, Tallahassee, FL 32306 USA
[4] Argonne Natl Lab, Adv Photon Source, Xray Sci Div, Argonne, IL 60439 USA
基金
美国国家科学基金会;
关键词
OPEN-CIRCUIT VOLTAGE; SOLAR-CELLS; HIGH-EFFICIENCY; CRYSTAL ORIENTATION; DEFECT TOLERANCE; GRAIN-SIZE; PERFORMANCE; PASSIVATION; RECOMBINATION; SEGREGATION;
D O I
10.1021/acs.chemmater.9b00650
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The mechanism and elemental composition that form the basis for the improved optical and electronic properties in mixed-ion lead halide perovskite solar cells are still not well understood compared to standard methylammonium lead triiodide perovskite devices. Here, we use synchrotron-based X-ray fluorescence to map the composition of perovskite thin films. To get insight into the elemental distribution during film growth, we fabricate films with three different thicknesses. To create a link between the composition and electronic properties, we perform Kelvin probe force microscopy and time-resolved photoluminescence spectroscopy. We find that the elemental composition is highly dependent on the film thickness, in particular, the I/Pb ratio is altered for single grains based on the film thickness. The difference in the I/Pb ratio reveals to be the root cause for the underlying difference in the film lifetime and defect density influencing charge carrier dynamics. Our results provide an in-depth analysis approach combining micro- and nanoscale techniques to shed light onto the fundamental processes, which help to further engineer perovskite thin films and improve device efficiencies.
引用
收藏
页码:3712 / 3721
页数:10
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