Excellent thermal stability of Al2O3/ZrO2/Al2O3 stack structure for metal-oxide-semiconductor gate dielectrics application

被引：28

作者：

Chang, HS ^{[1
]}

Jeon, S

Hwang, H

Moon, DW

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Gwangju 500712, South Korea

[2] Korea Res Inst Stand & Sci, Nano Surface Grp, Taejon 305600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 18期

关键词：

D O I：

10.1063/1.1477266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal stability of a nanolaminate (Al2O3/ZrO2/Al2O3) gate stack prepared by atomic layer chemical vapor deposition was investigated using medium-energy ion scattering spectroscopy, and x-ray photoelectron spectroscopy. We observed that the structure was stable up to 1000 degreesC under ultrahigh vacuum conditions. However, annealing in a nitrogen or oxygen ambient at 1 atm yielded the formation of an interfacial Zr-Al silicate layer at much lower temperatures. The growth of the interfacial silicate layer could be significantly reduced during furnace annealing via the use of plasma nitridation. (C) 2002 American Institute of Physics.

引用

页码：3385 / 3387

页数：3

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