Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

被引：805

作者：

Kim, Seyoung ^{[1
]}

Nah, Junghyo ^{[1
]}

Jo, Insun ^{[2
]}

Shahrjerdi, Davood ^{[1
]}

Colombo, Luigi ^{[3
]}

Yao, Zhen ^{[2
]}

Tutuc, Emanuel ^{[1
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[3] Texas Instruments Inc, Dallas, TX 75266 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期

关键词：

alumina; graphene; insulated gate field effect transistors; semiconductor device models; ATOMIC LAYER DEPOSITION; OXIDATION; OXYGEN; FILMS; OXIDE; SIO2;

D O I：

10.1063/1.3077021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8000 cm(2)/V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

引用

页数：3

共 21 条

[1] A self-consistent theory for graphene transport [J].

Adam, Shaffique ;

Hwang, E. H. ;

Galitski, V. M. ;

Das Sarma, S. .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) :18392-18397

[2] Making graphene visible [J].

Blake, P. ;

Hill, E. W. ;

Castro Neto, A. H. ;

Novoselov, K. S. ;

Jiang, D. ;

Yang, R. ;

Booth, T. J. ;

Geim, A. K. .

APPLIED PHYSICS LETTERS, 2007, 91 (06)

[3] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[4] Macroscopic graphene membranes and their extraordinary stiffness [J].

Booth, Tim J. ;

Blake, Peter ;

Nair, Rahul R. ;

Jiang, Da ;

Hill, Ernie W. ;

Bangert, Ursel ;

Bleloch, Andrew ;

Gass, Mhairi ;

Novoselov, Kostya S. ;

Katsnelson, M. I. ;

Geim, A. K. .

NANO LETTERS, 2008, 8 (08) :2442-2446

[5]

CHANG CC, 1978, F ELECTROCHEM SOC, V125, P787, DOI DOI 10.1149/1.2131549

[6] Intrinsic and extrinsic performance limits of graphene devices on SiO2 [J].

Chen, Jian-Hao ;

Jang, Chaun ;

Xiao, Shudong ;

Ishigami, Masa ;

Fuhrer, Michael S. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :206-209

[7] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[8] KINETICS AND MECHANISM OF OXIDATION OF SUPERPURITY ALUMINUM IN DRY OXYGEN .I. APPARATUS DESCRIPTION AND GROWTH OF AMORPHOUS OXIDE [J].

DIGNAM, MJ ;

FAWCETT, WR ;

BOHNI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :656-+

[9] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[10] Atomic structure of graphene on SiO2 [J].

Ishigami, Masa ;

Chen, J. H. ;

Cullen, W. G. ;

Fuhrer, M. S. ;

Williams, E. D. .

NANO LETTERS, 2007, 7 (06) :1643-1648

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