High Members of the 2D Ruddlesden-Popper Halide Perovskites: Synthesis, Optical Properties, andSolar Cellsof ( CH3( CH2)3NH3)2( CH3NH3)4Pb5I16

被引:354
作者
Stoumpos, Constantinos C. [1 ]
Soe, Chan Myae Myae [1 ,2 ]
Tsai, Hsinhan [2 ,3 ]
Nie, Wanyi [2 ]
Blancon, Jean-Christophe [2 ]
Cao, Duyen H. [1 ]
Liu, Fangze [2 ]
Traore, Boubacar [4 ]
Katan, Claudine [4 ]
Even, Jacky [5 ]
Mohite, Aditya D. [2 ]
Kanatzidis, Mercouri G. [1 ]
机构
[1] Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
[2] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
[3] Rice Univ, Dept Mat Sci & Nanoengn, Houston, TX 77005 USA
[4] Inst Sci Chim Rennes, CNRS, UMR 6226, F-35042 Rennes, France
[5] Univ Europeenne Bretagne, Foton Fonct Opt Technol Informat, CNRS, UMR 6082,Inst Natl Sci Appl, F-35708 Rennes, France
来源
CHEM | 2017年 / 2卷 / 03期
关键词
HOLE-CONDUCTOR-FREE; SOLAR-CELL; QUANTUM CONFINEMENT; EXCITON; STATE; NANOPLATELETS; CHEMISTRY; PROFILES; LAYERS; A=RB;
D O I
10.1016/j.chempr.2017.02.004
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Here, we present the fifth member (n = 5) of the Ruddlesden-Popper (CH3(CH2)(3)NH3)(2)( CH3NH3) n-1PbnI3n+ 1 family, which we successfully synthesized in high yield and purity. Phase purity could be clearly determined from its X-ray powder diffraction patterns, which feature the (0k0) Bragg reflections at low 20 angles. The obtained pure n = 5 compound was confirmed to be a direct band-gap semiconductor with E-g = 1.83 eV. The direct nature of the band gap is supported by density functional theory calculations. Intense photoluminescence was observed at room temperature at 678 nm arising from the band edge of the material. High-quality thin films can be prepared by the hot-casting method from solutions with a pure-phase compound as a precursor. The planar solar cells fabricated with n = 5 thin films demonstrate excellent power-conversion efficiency of 8.71% with an impressive open-circuit voltage of similar to 1 V. Our results point to the use of layered perovskites with higher n numbers and pure chemical composition.
引用
收藏
页码:427 / 440
页数:14
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