Synthesis and characterization of In doped ZnO thin film as efficient transparent conducting oxide candidate

被引：23

作者：

Bouaine, Abdelhamid ^{[1
,2
]}

Bourebia, Amira ^{[1
,3
]}

Guendouz, Hassan ^{[1
]}

Riane, Zineb ^{[1
]}

机构：

[1] Univ Mohammed Seddik Ben Yahia Jijel, LPMCN, Dept Phys, Fac Sci Exactes & Informat, Cite Ouled Aissa,BP 98, Jijel 18000, Algeria

[2] Univ Mohammed Seddik Ben Yahia Jijel, LEM, Fac Sci Exactes & Informat, Cite Ouled Aissa,BP 98, Jijel 18000, Algeria

[3] Univ Mohammed Seddik Ben Yahia Jijel, Dept Chim, Fac Sci Exactes & Informat, Cite Ouled Aissa,BP 98, Jijel 18000, Algeria

来源：

OPTIK | 2018年 / 166卷

关键词：

In doped ZnO thin films; Spin-coating; Transparent conductive oxide; Optical band gap; Urbach energy; ZINC-OXIDE; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; AL; INDIUM; DEPOSITION; POWDER;

D O I：

10.1016/j.ijleo.2018.04.017

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, we have successfully prepared the highly conducting and transparent In doped ZnO thin films on glass substrate using sol-gel spin-coating technique. Indium was incorporated with different concentrations of 1, 2, and 4 at.%. The effect of indium doping on the structural, optical and electrical properties of the produced films have been investigated. X-ray diffraction analysis showed that all the films were polycrystalline with a hexagonal wurtzite structure.The growth along (002) orientation was only preferred for 2 at.% doping concentration. The transparency of In doped ZnO thin films varied from 70 to 92% in visible range. Zinc oxide thin film doped with 4 at.% concentration revealed the largest grain size, the lowest optical gap, the highest intrinsic defects amount, and the lowest resistivity which was found to be 6.10 x 10(-4) Omega cm. These In doped ZnO thin films can have big interest in solar cell industry. (C) 2018 Elsevier GmbH. All rights reserved.

引用

页码：317 / 322

页数：6

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