Linewidth for interconduction subband transition in Si/Si1-xGex quantum wells

被引：5

作者：

Mukhopadhyay, B ^{[1
]}

Basu, PK ^{[1
]}

机构：

[1] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, W Bengal, India

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 08期

关键词：

D O I：

10.1002/pssb.200302003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The intersubband absorption linewidth has much importance in the operation of quantum well infrared photodetectors (QWIPs) and quantum cascade lasers (QCLs). Here we calculate the intersubband absorption linewidth due to interface roughness scattering, deformation potential acoustic phonon scattering, and optical (intervalley) phonon scattering via the deformation potential, i.e. g phonon. We consider the n-type Si/Si1-xGex structure. The linewidths are studied for various well widths and different in-plane kinetic energy. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1859 / 1864

页数：6

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