Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits

被引：8

作者：

Autran, J. L. ^{[1
,2
,3
,4
,5
]}

Glorieux, M. ^{[3
,4
,5
]}

Munteanu, D. ^{[1
,2
,3
,4
,5
]}

Clerc, S. ^{[3
,4
,5
]}

Gasiot, G. ^{[3
,4
,5
]}

Roche, P. ^{[3
,4
,5
]}

机构：

[1] Aix Marseille Univ, F-13397 Marseille 20, France

[2] Fac Sci Serv 142, CNRS, IM2NP, UMR 7334, F-13397 Marseille, France

[3] STMicroelectronics, F-38926 Crolles, France

[4] Aix Marseille Univ, Radiat Effects & Elect Reliabil REER Joint Lab, Marseille, France

[5] CNRS, F-75700 Paris, France

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 9-10期

关键词：

Single event effects; Radiation-induced transient current; Collected charge; Random-walk; Drift-diffusion; SPICE simulation; SIMULATION; SRAMS;

D O I：

10.1016/j.microrel.2014.07.088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work describes a new computational approach for modeling the radiation-induced transient current and charge collection at circuit-level. Our methodology is based on a random-walk process that takes into account both diffusion and drift of radiation-induced minority carriers in a non-constant electric field both in space and time. The model has been successfully coupled either with an internal routine or with SPICE for circuit solving and feedback on the charge-collection process. It is illustrated here for a junction impacted by an ionizing particle and embedded in a CMOS inverter. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：2278 / 2283

页数：6

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