High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays

被引：35

作者：

Lee, Ya-Ju ^{[1
]}

Lin, Shawn-Yu ^{[2
]}

Chiu, Ching-Hua ^{[3
]}

Lu, Tien-Chang ^{[3
]}

Kuo, Hao-Chung ^{[3
]}

Wang, Shing-Chung ^{[3
]}

Chhajed, Sameer ^{[4
]}

Kim, Jong Kyu ^{[4
]}

Schubert, E. Fred ^{[4
]}

机构：

[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei 116, Taiwan

[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[4] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 14期

关键词：

gallium compounds; III-V semiconductors; light emitting diodes; nanofabrication; nanophotonics; vapour deposition; wide band gap semiconductors; EFFICIENCY; BRIGHTNESS; NM;

D O I：

10.1063/1.3119192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here we propose and realize a scheme for making a direct contact to a two-dimensional nanorod light-emitting diode (LED) array using the oblique-angle deposition approach. And, more importantly, we demonstrate highly efficient electrical carrier injection into the nanorods. As a result, we show that at a 20 mA dc current injection, the light output power density of our nanorod LED array is 3700 mW cm(-2). More general, this contact scheme will pave the ways for making direct contacts to other kinds of nanoscale optoelectronic devices.

引用

页数：3

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