Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE

被引：3
作者：
Sasaki, Takuo [1 ]
Norman, Andrew G. [2 ]
Romero, Manuel J. [2 ]
Al-Jassim, Mowafak M. [2 ]
Takahasi, Masamitu [1 ]
Kojima, Nobuaki [3 ]
Ohshita, Yoshio [3 ]
Yamaguchi, Masafumi [3 ]
机构：
[1] Japan Atom Energy Agcy, 1-1-1 Koto, Sayo, Hyogo 6795148, Japan
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
[3] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 | 2013年 / 10卷 / 11期
关键词：
III-V compound semiconductors; lattice defects; molecular beam epitaxy; solar cells; BUFFER LAYERS; HETEROSTRUCTURES; EPITAXY; STRESS;
D O I：
10.1002/pssc.201300284
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Defect characterization in molecular beam epitaxial (MBE) compositionally-graded InxGa1-xAs layers on GaAs substrates consisting different thickness of overshooting (OS) layers was carried out using cathodoluminescence (CL) and transmission electron microscopy (TEM). We found that the thickness of the OS layer influences not only stress but also lattice defects generated in a top InGaAs layer. While the top InGaAs layer with a thin OS layer is under compression and has mainly threading dislocations, the top layer with a thick OS layer is under tension and exhibits inhomogeneous strain associating with phase separation. We will discuss the mechanisms of defect generation and their in-plane distribution based on strain relaxation at the top and OS layers. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1640 / 1643
页数：4
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