Graphene radio frequency receiver integrated circuit

被引:104
作者
Han, Shu-Jen [1 ]
Garcia, Alberto Valdes [1 ]
Oida, Satoshi [1 ]
Jenkins, Keith A. [1 ]
Haensch, Wilfried [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
TRANSISTORS; GROWTH; FACE;
D O I
10.1038/ncomms4086
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without significantly degrading transistor performance has proven to be challenging, posing one of the major bottlenecks to compete with existing technologies. Here we present a fabrication method fully preserving graphene transistor quality, demonstrated with the implementation of a high-performance three-stage graphene integrated circuit. The circuit operates as a radio frequency receiver performing signal amplification, filtering and down-conversion mixing. All circuit components are integrated into 0.6 mm(2) area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit complexity and silicon complementary metal-oxide-semiconductor process compatibility. The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal.
引用
收藏
页数:6
相关论文
共 30 条
[1]   10 dB small-signal graphene FET amplifier [J].
Andersson, M. A. ;
Habibpour, O. ;
Vukusic, J. ;
Stake, J. .
ELECTRONICS LETTERS, 2012, 48 (14) :861-862
[2]  
Cao Q, 2013, NAT NANOTECHNOL, V8, P180, DOI [10.1038/nnano.2012.257, 10.1038/NNANO.2012.257]
[3]   High-frequency self-aligned graphene transistors with transferred gate stacks [J].
Cheng, Rui ;
Bai, Jingwei ;
Liao, Lei ;
Zhou, Hailong ;
Chen, Yu ;
Liu, Lixin ;
Lin, Yung-Chen ;
Jiang, Shan ;
Huang, Yu ;
Duan, Xiangfeng .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2012, 109 (29) :11588-11592
[4]   Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors [J].
Dimitrakopoulos, Christos ;
Lin, Yu-Ming ;
Grill, Alfred ;
Farmer, Damon B. ;
Freitag, Marcus ;
Sun, Yanning ;
Han, Shu-Jen ;
Chen, Zhihong ;
Jenkins, Keith A. ;
Zhu, Yu ;
Liu, Zihong ;
McArdle, Timothy J. ;
Ott, John A. ;
Wisnieff, Robert ;
Avouris, Phaedon .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (05) :985-992
[5]   Is 3D chip technology the next growth engine for performance improvement? [J].
Emma, P. G. ;
Kursun, E. .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2008, 52 (06) :541-552
[6]   Impact of gate resistance in graphene radio frequency transistors [J].
Farmer, Damon B. ;
Valdes-Garcia, Alberto ;
Dimitrakopoulos, Christos ;
Avouris, Phaedon .
APPLIED PHYSICS LETTERS, 2012, 101 (14)
[7]   Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors [J].
Guo, Zelei ;
Dong, Rui ;
Chakraborty, Partha Sarathi ;
Lourenco, Nelson ;
Palmer, James ;
Hu, Yike ;
Ruan, Ming ;
Hankinson, John ;
Kunc, Jan ;
Cressler, John D. ;
Berger, Claire ;
de Heer, Walt A. .
NANO LETTERS, 2013, 13 (03) :942-947
[8]   A 30-GHz Integrated Subharmonic Mixer Based on a Multichannel Graphene FET [J].
Habibpour, Omid ;
Vukusic, Josip ;
Stake, Jan .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (02) :841-847
[9]   A Subharmonic Graphene FET Mixer [J].
Habibpour, Omid ;
Cherednichenko, Sergey ;
Vukusic, Josip ;
Yhland, Klas ;
Stake, Jan .
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (01) :71-73
[10]   Multifinger Embedded T-Shaped Gate Graphene RF Transistors With High fMAX/fT Ratio [J].
Han, Shu-Jen ;
Oida, Satoshi ;
Jenkins, Keith A. ;
Lu, Darsen ;
Zhu, Yu .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (10) :1340-1342