A 90nm SiGe BiCMOS Technology for mm-wave and high-performance analog applications

被引：0

作者：

Pekarik, John J. ^{[1
]}

Adkisson, J. ^{[1
]}

Gray, P. ^{[1
]}

Liu, Q. ^{[1
]}

Camillo-Castillo, R. ^{[1
]}

Khater, M. ^{[2
]}

Jain, V. ^{[1
]}

Zetterlund, B. ^{[1
]}

DiVergilio, A. ^{[1
]}

Tian, X. ^{[1
]}

Vallett, A. ^{[1
]}

Ellis-Monaghan, J. ^{[1
]}

Gross, B. J. ^{[1
]}

Cheng, P. ^{[4
]}

Kaushal, V. ^{[4
]}

He, Z. ^{[1
]}

Lukaitis, J. ^{[1
]}

Newton, K. ^{[1
]}

Kerbaugh, M. ^{[1
]}

Cahoon, N. ^{[1
]}

Vera, L. ^{[3
]}

Zhao, Y. ^{[3
]}

Long, J. R. ^{[3
]}

Valdes-Garcia, A. ^{[2
]}

Reynolds, S. ^{[2
,4
]}

Lee, W. ^{[2
,4
]}

Sadhu, B. ^{[2
]}

Harame, D. ^{[1
]}

机构：

[1] IBM Corp, Essex Jct, VT 05452 USA

[2] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY USA

[3] Delft Univ Technol, NL-2628 CD Delft, Netherlands

[4] IBM Corp, Armonk, NY USA

来源：

2014 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2014年

关键词：

Silicon bipolar process technology; Silicon germanium; Heterojunction bipolar transistors; Millimeter wave technology;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f(T) and 360 GHz f(MAX) high performance SiGe HBTs, 135 GHz f(T) and 2.5V BVCEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and a library of digital functions aids logic and memory design. The technology supports mm-wave and high-performance RF/Analog applications.

引用

页码：92 / 95

页数：4

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