Effect of a stimulation layer on solid-phase crystallization of an amorphous Si film by pulse laser irradiation

被引：0

作者：

Kieu, Mai Lien Thi ^{[1
]}

Mochizuki, Kazuhide ^{[1
]}

Horita, Susumu ^{[1
]}

机构：

[1] JAIST, Nomi, Ishikawa 9231291, Japan

来源：

PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS | 2013年

关键词：

TEMPERATURE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solid-phase crystallization of an amorphous Si film by pulse laser beam is investigated using a stimulation layer of yttria-stabilized zirconia (YSZ), compared with that on glass substrate. It is found that, at high pulse number, FWHM of c-Si peaks and crystalline fractions of Si films on YSZ layers are smaller and higher, respectively, than those on glass substrates. Moreover, grain size of Si on YSZ layers is more uniform, compared with that on glass substrates. It is considered that the results are owed to crystallization stimulation effect of YSZ layer.

引用

页码：175 / 176

页数：2

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