Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas

被引：17

作者：

Caldwell, Joshua D. ^{[1
]}

Mastro, Michael A.

Hobart, Karl D.

Glembocki, Orest J.

Eddy, Charles R., Jr.

Bassim, Nabil D.

Holm, R. T.

Henry, Richard L.

Twigg, Mark E.

Kub, Fritz

Neudeck, Phillip G.

Trunek, Andrew J.

Powell, J. Anthony

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA

[3] OAI, Cleveland, OH 44135 USA

[4] Sest Inc, Cleveland, OH 44135 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 26期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1063/1.2218045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We previously reported 100-fold reductions in III-N heterofilm threading dislocation density achieved via growth on top of (0001) 4H-SiC mesas completely free of atomic scale steps. This letter compares the electroluminescent (EL) output of GaN pn junctions grown on top of 4H-SiC mesas with and without such steps. An average of 49% enhancement of the ultraviolet luminescence (380 nm) was observed in step-free mesas over comparable "stepped" counterparts. Despite the intense EL from the step-free devices, significant leakage was observed through the periphery of the device, possibly due to the lack of GaN junction isolation processing.

引用

页数：3

共 12 条

[1] Lowered dislocation densities in uniform GaN layers grown on step-free (0001)4H-SiC mesa surfaces [J].