Insight into boron-doped diamond Raman spectra characteristic features

被引：124

作者：

Mortet, V. ^{[1
,2
]}

Zivcova, Z. Vlckova ^{[3
]}

Taylor, A. ^{[1
,2
]}

Frank, O. ^{[3
]}

Hubik, P. ^{[4
]}

Tremouilles, D. ^{[5
]}

Jomard, F. ^{[6
]}

Barjon, J. ^{[6
]}

Kavan, L. ^{[3
]}

机构：

[1] Czech Acad Sci, Inst Phys, Slovance 1999-2, Prague 18221 8, Czech Republic

[2] Czech Tech Univ, Fac Biomed Engn, Sitna 3105, Kladno 27201, Czech Republic

[3] Czech Acad Sci, J Heyrovsky Inst Phys Chem, Dolejskova 3, Prague 18223 8, Czech Republic

[4] Czech Acad Sci, Inst Phys, Cukrovarnicka 10, Prague 16200 6, Czech Republic

[5] Univ Toulouse, LAAS CNRS, CNRS, 7,Ave Colonel Roche, F-31031 Toulouse 4, France

[6] Univ Versailles St Quentin, Grp Etud Matiere Condensee, 45,Ave Etats Unis, F-78035 Versailles, France

来源：

CARBON | 2017年 / 115卷

关键词：

WATER-TREATMENT; FANO; SUPERCONDUCTIVITY; SPECTROSCOPY; ELECTRODES; FILMS; SENSITIZATION; INTERFERENCE; DEPENDENCE; SCATTERING;

D O I：

10.1016/j.carbon.2017.01.022

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Characteristic Raman features of boron-doped diamond layers with metallic conduction are studied experimentally and discussed in comparison with an extensive selection of literature data. Despite evidence that the main Raman bands are mostly characteristic features of carbon atom vibration modes, their position is found to be proportional to boron concentration. While the origin of the Raman bands located at c.a. 500 cm(-1) remains unclear, the band centred at c.a. 1200 cm(-1) is attributed to a maximum of phonon density of states due to softening of the Raman wave vector conservation rule. The downshift and broadening of the diamond line are attributed, primarily, to the domain size effect caused by scattering on boron impurities, secondly to the Fano effect due to electronic Raman interaction, and finally to lattice expansion due to the boron doping. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：279 / 284

页数：6

共 49 条

[1] Isotopic substitution of boron and carbon in superconducting diamond epilayers grown by MPCVD [J].

Achatz, P. ;

Omnes, F. ;

Ortega, L. ;

Marcenat, C. ;

Vacik, J. ;

Hnatowicz, V. ;

Koester, U. ;

Jomard, F. ;

Bustarret, E. .

[2] FANO INTERFERENCE OF THE RAMAN PHONON IN HEAVILY BORON-DOPED DIAMOND FILMS GROWN BY CHEMICAL-VAPOR-DEPOSITION [J].

AGER, JW ;

WALUKIEWICZ, W ;

MCCLUSKEY, M ;

PLANO, MA ;

LANDSTRASS, MI .

APPLIED PHYSICS LETTERS, 1995, 66 (05) :616-618

[3] Thermal conduction in doped single-crystal silicon films [J].

Asheghi, M ;

Kurabayashi, K ;

Kasnavi, R ;

Goodson, KE .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) :5079-5088

[4] Non-destructive determination of the boron concentration of heavily doped metallic diamond thin films from Raman spectroscopy [J].

Bernard, M ;

Deneuville, A ;

Muret, P .

[5] About the origin of the low wave number structures of the Raman spectra of heavily boron doped diamond films [J].

Bernard, M ;

Baron, C ;

Deneuville, A .

[6] Optical and electronic properties of heavily boron-doped homo-epitaxial diamond [J].

Bustarret, E ;

Gheeraert, E ;

Watanabe, K .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 199 (01) :9-18

[7] EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES [J].

CERDEIRA, F ;

FJELDLY, TA ;

CARDONA, M .

PHYSICAL REVIEW B, 1973, 8 (10) :4734-4745

[8] Critical review of electrochemical advanced oxidation processes for water treatment applications [J].

Chaplin, Brian P. .

ENVIRONMENTAL SCIENCE-PROCESSES & IMPACTS, 2014, 16 (06) :1182-1203

[9] Deep ultra-violet Raman imaging of CVD boron-doped and non-doped diamond films [J].

Crisci, A. ;

Mermoux, M. ;

Saubat-Marcus, B. .

[10] Diamond electrodes: Diversity and maturity [J].

Einaga, Yasuaki ;

Foord, John S. ;

Swain, Greg M. .

MRS BULLETIN, 2014, 39 (06) :525-532

← 1 2 3 4 5 →