Giant spin-splitting and gap renormalization driven by trions in single-layer WS2/h-BN heterostructures

被引:97
作者
Katoch, Jyoti [1 ]
Ulstrup, Soren [2 ,3 ]
Koch, Roland J. [2 ]
Moser, Simon [2 ]
McCreary, Kathleen M. [4 ]
Singh, Simranjeet [1 ]
Xu, Jinsong [1 ]
Jonker, Berend T. [4 ]
Kawakami, Roland K. [1 ]
Bostwick, Aaron [2 ]
Rotenberg, Eli [2 ]
Jozwiak, Chris [2 ]
机构
[1] Ohio State Univ, Dept Phys, 174 W 18th Ave, Columbus, OH 43210 USA
[2] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[3] Aarhus Univ, Interdisciplinary Nanosci Ctr iNANO, Dept Phys & Astron, Aarhus C, Denmark
[4] Naval Res Lab, Washington, DC 20375 USA
基金
瑞士国家科学基金会;
关键词
BANDGAP RENORMALIZATION; COMPRESSIBILITY; INVERSION;
D O I
10.1038/s41567-017-0033-4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), new electronic phenomena such as tunable bandgaps(1-3) and strongly bound excitons and trions emerge from strong many-body effects(4-6), beyond the spin and valley degrees of freedom induced by spin-orbit coupling and by lattice symmetry(7). Combining single-layer TMDs with other 2D materials in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these many-body effects, by means of engineered interlayer interactions(8-10). Here, we use micro-focused angle-resolved photoemission spectroscopy (microARPES) and in situ surface doping to manipulate the electronic structure of single-layer WS2 on hexagonal boron nitride (WS2/h-BN). Upon electron doping, we observe an unexpected giant renormalization of the spin-orbit splitting of the single-layer WS2 valence band, from 430 meV to 660 meV, together with a bandgap reduction of at least 325 meV, attributed to the formation of trionic quasiparticles. These findings suggest that the electronic, spintronic and excitonic properties are widely tunable in 2D TMD/h-BN heterostructures, as these are intimately linked to the quasiparticle dynamics of the materials(11-13).
引用
收藏
页码:355 / +
页数:6
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